Title :
Hyper-thin channel M.B.E. GaAs power F.E.T.s by single atomic plane doping
Author :
Wood, Colin E.C. ; Judaprawira, Seno ; Eastman, Lester F.
Author_Institution :
Cornell University, Ithaca, NY, USA
Keywords :
Atomic layer deposition; Capacitance; Contact resistance; Doping; Electrons; FETs; Gallium arsenide; Linearity; Rough surfaces; Surface roughness;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189633
