Title :
Transient effects in submicron devices load line dependence
Author :
Grubin, H.L. ; Ferry, D.K. ; Barker, J.R.
Author_Institution :
United Technologies Research Center, East Hartford, CT, USA
Abstract :
We compute the transient response of gallium arsenide submicron two terminal devices and examine their load line dependence.
Keywords :
Boltzmann equation; Charge carrier density; Distribution functions; Electron mobility; Gallium arsenide; Impurities; Particle scattering; Physics; Power supplies; Temperature;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189635
