• DocumentCode
    3554949
  • Title

    Transient effects in submicron devices load line dependence

  • Author

    Grubin, H.L. ; Ferry, D.K. ; Barker, J.R.

  • Author_Institution
    United Technologies Research Center, East Hartford, CT, USA
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    394
  • Lastpage
    397
  • Abstract
    We compute the transient response of gallium arsenide submicron two terminal devices and examine their load line dependence.
  • Keywords
    Boltzmann equation; Charge carrier density; Distribution functions; Electron mobility; Gallium arsenide; Impurities; Particle scattering; Physics; Power supplies; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189635
  • Filename
    1480500
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554949