The effect of current bias on the reliability of read-type Schottky barrier GaAs IMPATT´s

Current bias rather than temperature effects are shown to be dominant in determining the reliability of high efficiency Read-type Schottky barrier GaAs IMPATTs. By analyzing the life test data, the change in junction position is found to be proportional to the product of current density and time. The current-related coefficient of proportionality is found to be 0.072Å per kA/cm²per hour with a standard deviation of 0.018. The implications of this study to other microwave solid-state devices are important.