Title :
Refractory silicides for low resistivity gates and interconnects
Author_Institution :
Bell Laboratories, Murray Hill, NJ, USA
Abstract :
The applicability of various refractory metal silicides as high conductivity metallization will be discussed with special reference to their compatibility with the VLSI processing. In particular, the formation, properties and oxidation characteristics of the silicides of titanium and tantalum will be reviewed. It will be shown that these silicides show a high degree of promise as high conductivity gate metals.
Keywords :
Conductivity; Delay; Metallization; Oxidation; Silicides; Silicon carbide; Sputtering; Temperature; Titanium; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189654
