Title :
MoSi2-gate MOSFET´s for VLSI
Author :
Chow, T.P. ; Steckl, A.J. ; Motamedi, M.E. ; Brown, D.M.
Author_Institution :
General Electric Company, Schenectady, N.Y.
Abstract :
Refractory metal silicide gate n-channel MOSFET´s have been fabricated by RF sputtering from a hot-pressed MoSi2alloy target. The annealed MoSi2sheet resistance was 2Ω/□. The MOSFET´s were fabricated using plasma etching, projection alignment and a fully ion-implanted process. Typical values for a 1.7 × 1.7 µm2linear MOSFET are a threshold voltage of 1- 1.5V and a transconductance of 50-100 µmho. Short channel (length and width) and substrate effects on the threshold voltage are demonstrated.
Keywords :
Annealing; Dielectrics; Fabrication; Hydrogen; MOSFET circuits; Radio frequency; Silicides; Sputtering; Systems engineering and theory; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189655
