DocumentCode :
3554971
Title :
WSi2gate MOS devices
Author :
Saraswat, Krishna C. ; Mohammadi, F. ; Meindl, J.D. ; Meindl, J.D.
Author_Institution :
Stanford University, Stanford, California
Volume :
25
fYear :
1979
fDate :
1979
Firstpage :
462
Lastpage :
464
Abstract :
Tungsten silicide gate MOS capacitors have been fabricated on n-type
Keywords :
Annealing; Capacitance-voltage characteristics; Chemicals; Conductivity; Fabrication; Oxidation; Silicon; Sputtering; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
Type :
conf
DOI :
10.1109/IEDM.1979.189656
Filename :
1480521
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3554971
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