Title :
High temperature stable metal-GaAs contacts
Author_Institution :
AEG-TELEFUNKEN Serienprodukte AG, Heilbronn/West Germany
Abstract :
Ti based multilayer contacts on n-GaAs have been tested in respect to their short time annealing characteristics up to 800 °C. While the annealing range for Ti-Mo-Au Schottky barrier (SB) contacts is restricted to below 550 °C, Ti in combination with W and with Au overlay was found to produce essentially unchanged diode characteristics up to temperatures in the 700 °C range with the Ti/W film being stable even above 800 °C.
Keywords :
Annealing; Diodes; FETs; Gallium arsenide; Gold; Nonhomogeneous media; Passivation; Semiconductor device testing; Sputter etching; Temperature distribution;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189658
