DocumentCode
3554981
Title
Planar high yield GaAs IC processing techniques
Author
Welch, B.W. ; Eden, R.C. ; Shen, Y.D. ; Zucca, R.
Author_Institution
Rockwell International Electronics Research Center, Thousand Oaks, California
Volume
25
fYear
1979
fDate
1979
Firstpage
493
Lastpage
496
Abstract
A rapidly developing planar, GaAs LSI fabrication technology has been successfully demonstrated at the MSI (∼60-100 gates) level. Extension of the current MSI technology to the LSI/VLSI domain will depend critically on the yield of the GaAs material and fabrication processes used. The purpose of this paper is to describe a planar GaAs IC process which combines unique planar device structures with a number of LSI compatible high yield processes including ion implantation, photolithography, plasma etching, and ion milling.
Keywords
Fabrication; Gallium arsenide; Ion implantation; Large scale integration; Lithography; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189665
Filename
1480530
Link To Document