DocumentCode :
3554982
Title :
Fully ion implanted planar GaAs E-JFET process
Author :
Troeger, G.L. ; Behle, A.F. ; Friebertshauser, P.E. ; Hu, K.L. ; Watanabe, S.H.
Author_Institution :
McDonnell Douglas Astronautics Company, Huntington Beach, California
Volume :
25
fYear :
1979
fDate :
1979
Firstpage :
497
Lastpage :
500
Abstract :
This paper describes the technology for fabrication of GaAs junction field effect transistor integrated circuits. 1 µm gate geometries are produced with Mg+ion implantation which was not possible with Zn diffusion due to lateral spreading. Threshold voltage is adjustable by varying the Mg+implant energy, and shows improved reproducibility. Ring oscillator circuits fabricated with implanted gates demonstrate the high speed and low power capability of this technology.
Keywords :
FET integrated circuits; Fabrication; Gallium arsenide; Geometry; Implants; Integrated circuit technology; Ion implantation; Reproducibility of results; Threshold voltage; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
Type :
conf
DOI :
10.1109/IEDM.1979.189666
Filename :
1480531
Link To Document :
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