Title :
Design and performance of resistive-gated MOSFETs for analog integrated circuits
Author :
Ko, P.K. ; Muller, R.S.
Author_Institution :
University of California, Berkeley, California
Abstract :
Polysilicon resistive-gated MOSFETs are shown to be useful components for linear MOS applications as well as for signal mixers. Gate-resistance values can be varied from an effective 1 Gigaohm to 10 kilohms using ion implantation with boron. Theory for the resistive-gated MOSFET predicts high gain at low power and wide dynamic range with low harmonic distortion. Measurements confirm this theory.
Keywords :
Analog integrated circuits; Application software; Boron; Conductivity; Doping; Electrical resistance measurement; Fabrication; Ion implantation; Laboratories; MOSFETs;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189669
