A new self-aligned source/drain diffusion technology from selectively oxidized poly-silicon

A novel self-aligned source/drain diffusion technology suitable for high density n-channel MOS LSI´s is proposed. Gate regions and source/drain junctions are formed simultaneously by the selective oxidation of a phosphorous doped poly-silicon layer. A short channel device with a flat surface and self-aligned contact openings is realized based on this technology. Utilizing these advantages, a microcomputer CPU chip is successfully fabricated.