Title :
A new CML memory cell for high density memory devices
Author :
Sekine, Masatoshi ; Sinozaki, Satoshi ; Menjo, Atsuthiko ; Saito, Sinji
Author_Institution :
NTIS Incorporated, Kanagawa, Japan
Abstract :
A new CML cell structure is realized by introducing a new configuration for the load resistors in a cell. The load resistors are vertically integrated within multi-emitter transistor, resulting in a very small cell area. The cell size of 960 µm2is obtained by using 2 µm design rule, which is approximately 60% of the Schottky load cell. The operation of new cell is demonstrated by 1k bit CML RAM.
Keywords :
Circuits; Data processing; Energy consumption; Flip-flops; Laboratories; Random access memory; Read-write memory; Resistors; Semiconductor memory; Velocity measurement;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189695
