DocumentCode :
3555018
Title :
GaAlAs/GaAs heterojunction Schottky barrier gate CCD
Author :
Liu, Y.Z. ; Deyhimy, I. ; Anderson, R.J. ; Harris, J.S. ; Tomasetta, L.R.
Author_Institution :
Rockwell International Electronics Research Center, Thousand Oaks, California
Volume :
25
fYear :
1979
fDate :
1979
Firstpage :
622
Lastpage :
624
Abstract :
A buried channel Schottky barrier gate GaAlAs/GaAs CCD is described. Device structures, fabrication techniques and results are discussed. Charge transfer efficiency of 0.9993 per transfer has been measured on these 30 gate (10 pixel) CCDs. Dark current was found to be about an order of magnitude lower in GaAlAs than in GaAs. The best Ga.78Al.22As device has between 2 to 4nA/cm2at room temperature.
Keywords :
Charge coupled devices; Charge measurement; Charge transfer; Current measurement; Dark current; Fabrication; Gallium arsenide; Heterojunctions; Schottky barriers; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
Type :
conf
DOI :
10.1109/IEDM.1979.189701
Filename :
1480566
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3555018
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