DocumentCode :
3555025
Title :
Investigation of microplasmas in InP avalanche photodiodes
Author :
Capasso, F. ; Petroff, P.M. ; Bonner, W.B. ; Sumski, S.
Author_Institution :
Bell Telephone Laboratories, Murray Hill, New Jersey, USA
Volume :
25
fYear :
1979
fDate :
1979
Firstpage :
647
Lastpage :
649
Abstract :
The electron beam induced current technique has been used to investigate microplasmas in InP avalanche photodiodes. It is shown that microplasmas develop along growth induced doping striations. Edge and bulk microplasmas have been detected, the latter only originating at recombination centers. Leakage currents of 15 nA at 0.9 VBand dc avalanche gains >103have been observed in the best devices.
Keywords :
Avalanche photodiodes; Crystalline materials; Diodes; Electron beams; Indium phosphide; Leakage current; Plasma applications; Plasma materials processing; Spontaneous emission; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
Type :
conf
DOI :
10.1109/IEDM.1979.189708
Filename :
1480573
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3555025
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