Title :
Investigation of microplasmas in InP avalanche photodiodes
Author :
Capasso, F. ; Petroff, P.M. ; Bonner, W.B. ; Sumski, S.
Author_Institution :
Bell Telephone Laboratories, Murray Hill, New Jersey, USA
Abstract :
The electron beam induced current technique has been used to investigate microplasmas in InP avalanche photodiodes. It is shown that microplasmas develop along growth induced doping striations. Edge and bulk microplasmas have been detected, the latter only originating at recombination centers. Leakage currents of 15 nA at 0.9 VBand dc avalanche gains >103have been observed in the best devices.
Keywords :
Avalanche photodiodes; Crystalline materials; Diodes; Electron beams; Indium phosphide; Leakage current; Plasma applications; Plasma materials processing; Spontaneous emission; Zinc;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189708