Title :
N-Channel Schottky contacts correlated with GaAs surface structure and treatment
Author :
McNab, T.K. ; Mandal, R.P. ; Wilson, D.O. ; Bardin, T.T. ; Petersen, H.L.
Author_Institution :
Lockheed Missiles and Space Company, Sunnyvale, California
Keywords :
Annealing; Fabrication; Gallium arsenide; Missiles; Oxidation; Particle beams; Schottky barriers; Surface structures; Surface treatment; Temperature;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189725
