A high power K/Ka-band monolithic T/R switch

Author

Bernkopf, P. ; Schindler, M. ; Bertrand, A.

Author_Institution

Raytheon Co., Lexington, MA, USA

fYear

1991

fDate

10-11 June 1991

Firstpage

15

Lastpage

18

Abstract

A high-power K/Ka-band MESFET switch monolithic microwave integrated circuit (MMIC) has been developed for use in transmit/receive (T/R) modules. The switch demonstrates 0.2 dB insertion loss compression with 30 dBm input power, 12 dB higher than previously reported for K/Ka-band MESFET switches. Also, no isolation degradation was apparent with up to 28 dBm input power, a 13 dB improvement over the same previously demonstrated switches. A combination of techniques was used to yield higher power handling while preserving low loss and high isolation. These circuit techniques include the use of stacked MESFETs with large peripheries to improve power handling and transmission line transformers to minimize loss and maintain high isolation.<>

Keywords

MMIC; Schottky gate field effect transistors; field effect integrated circuits; radar equipment; semiconductor switches; switching circuits; K-band; Ka-band; MESFET switch; MMIC; high isolation; low loss; monolithic T/R switch; monolithic microwave integrated circuit; power handling; stacked MESFETs; transmission line transformers; transmit/receive modules; Degradation; Insertion loss; MESFET circuits; MESFET integrated circuits; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Power transmission lines; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1991. Digest of Papers, IEEE 1991

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-0087-4

Type

conf

DOI

10.1109/MCS.1991.148077

Filename

148077