Title :
35 GHz InGaAs HEMT MMIC downconverter
Author :
Yonaki, J. ; Carandang, R. ; Allen, B.A. ; Hoppe, M. ; Jones, W.L. ; Yang, D.C. ; Brunnenmeyer, C.L.
Author_Institution :
TRW Energy Syst. Group, Div. of Electron. & Technol., Redondo Beach, CA, USA
Abstract :
The design and development of a 35 GHz HEMT (high electron mobility transistor) MMIC (monolithic microwave integrated circuit) downconverter are reported. This completely monolithic chip consists of a balanced two-stage low-noise amplifier (LNA) cascaded with a singly balanced (HEMT compatible) diode mixer. Conversion gain of 5 dB over a 20 to 100 MHz IF (intermediate frequency) output with an RF frequency of 35 GHz and an LO (local oscillator) frequency=RF+IF has been measured. In addition to the downconverter macrocell, the LNA and mixer designs were fabricated as individual microcells. The LNA has demonstrated state-of-the-art performance: the measured noise figure from 34 to 40 GHz is less than 2.8 dB. Associated gain is 14.0+/-0.4 dB over a 30 to 40 GHz bandwidth. Input and output voltage standing wave ratio is better than 1.2:1. The singly balanced mixer exhibited conversion loss of less than 5 dB.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; frequency convertors; gallium arsenide; high electron mobility transistors; indium compounds; 14 dB; 2.8 dB; 20 to 100 MHz; 30 to 40 GHz; 35 GHz; 5 dB; EHF; HEMT; InGaAs; LNA; MIMIC; MM-wave IC; MMIC downconverter; conversion loss; diode mixer; high electron mobility transistor; low-noise amplifier; monolithic microwave integrated circuit; Frequency conversion; Gain; HEMTs; Indium gallium arsenide; Low-noise amplifiers; MMICs; MODFETs; Microwave integrated circuits; Mixers; Monolithic integrated circuits;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1991. Digest of Papers, IEEE 1991
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-0087-4
DOI :
10.1109/MCS.1991.148085
