Title :
MM-wave MIMIC receiver components
Author :
Trippe, M.W. ; Weinreb, S. ; Duncan, S.W. ; Eskandarian, A. ; Golja, B.A. ; Martel, D.C. ; Mendenilla, G. ; Power, B. ; Sequeira, H.B. ; Southwick, S.B. ; Svensson, S.P. ; Tu, D.-W. ; Byer, N.E.
Author_Institution :
Martin Marietta Lab., Baltimore, MD, USA
Abstract :
Monolithic W-band amplifiers and a novel W-band mixer fabricated using a 0.1 mu m pseudomorphic MODFET technology are presented. Single-stage W-band amplifiers delivered 8.5-dB gain; four-stage units showed 23-dB maximum gain or 4.5-dB noise figure, 21.7-dB associated gain. Monolithic W-band mixers have shown 11.8 dB conversion loss.<>
Keywords :
MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; mixers (circuits); receivers; 11.8 dB; 21.7 dB; 23 dB; 4.5 dB; 8.5 dB; EHF; MM-wave MIMIC; W-band; amplifiers; conversion loss; four-stage units; mixer; monolithic IC; pseudomorphic MODFET technology; receiver components; single stage units; Circuit testing; Design optimization; Diodes; Fabrication; Fingers; HEMTs; MODFET circuits; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1991. Digest of Papers, IEEE 1991
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-0087-4
DOI :
10.1109/MCS.1991.148086
