A W-band monolithic pseudomorphic InGaAs HEMT downconverter

Author

Chang, K.W. ; Wang, H. ; Chen, T.N. ; Tan, K. ; Berenz, I. ; Dow, G.S. ; Han, A.C. ; Garske, D. ; Liu, L.C.T.

Author_Institution

TRW Energy Syst. Group, Div. of Electron & Technol., Redondo Beach, CA, USA

fYear

1991

fDate

10-11 June 1991

Firstpage

55

Lastpage

58

Abstract

The design, fabrication, and evaluation of a fully integrated W-band monolithic downconverter based on an InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) are presented. The downconverter consists of a two-stage low-noise amplifier (LNA) and a singly balanced HEMT gate diode mixer. Measured results of the complete downconverter show a conversion gain of 5.3 dB and a noise figure of 6.8 dB at 94 GHz. The whole downconverter is a first pass design and has a high circuit yield. Furthermore, this is the first reported monolithic downconverter in the W-band frequency range, and represents the state-of-the-art in monolithic millimeter-wave technology.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; frequency convertors; gallium arsenide; high electron mobility transistors; indium compounds; 5.3 dB; 6.8 dB; 94 GHz; EHF; HEMT downconverter; InGaAs; MIMIC; MM-wave IC; W-band; conversion gain; fabrication; high-electron-mobility transistor; low-noise amplifier; monolithic downconverter; monolithic millimeter-wave technology; pseudomorphic device; two-stage LNA; Diodes; Fabrication; Gain measurement; HEMTs; Indium gallium arsenide; Integrated circuit measurements; Low-noise amplifiers; Noise figure; Noise measurement; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1991. Digest of Papers, IEEE 1991

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-0087-4

Type

conf

DOI

10.1109/MCS.1991.148087

Filename

148087