Title :
A 2 GHz enhancement mode GaAs down converter IC for satellite TV tuner
Author :
Philippe, P. ; Pertus, M.
Author_Institution :
Lab. d´´Electron. Philips, Limeil-Brevannes, France
Abstract :
A fully integrated 2 GHz down-converter IC has been designed and fabricated for satellite TV application using an enhancement mode GaAs foundry process. Its internal oscillator covers a 1.2 GHz bandwidth that makes it possible to receive the extended satellite TV band from 950 MHz to 2 GHz. The LO (local oscillator) power leakage is greatly reduced as compared to a discrete circuit: it is about -40 dBm at the RF input and less than -30 dBm at the IF (intermediate frequency) output. This IC operates under a single 5 V supply voltage and its performance is an outstanding trade-off between noise, linearity, power consumption, and simplicity of implementation. It is encapsulated in a standard low-cost plastic package.<>
Keywords :
III-V semiconductors; MMIC; direct broadcasting by satellite; field effect integrated circuits; frequency convertors; gallium arsenide; television receivers; tuning; 1.2 GHz; 5 V; 950 MHz to 2 GHz; MESFET process; UHF; down converter IC; downconvertor IC; enhancement mode GaAs; low-cost plastic package; satellite TV tuner; single 5 V supply voltage; Application specific integrated circuits; Bandwidth; Foundries; Gallium arsenide; Integrated circuit noise; Local oscillators; Radio frequency; Satellite broadcasting; TV; Voltage;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1991. Digest of Papers, IEEE 1991
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-0087-4
DOI :
10.1109/MCS.1991.148089
