A class of monolithic HBT multipliers

Author

Perry, C.B. ; Ip, K.T. ; Claxton, K.S. ; Allen, B.R. ; Farris, A.E.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

fYear

1991

fDate

10-11 June 1991

Firstpage

77

Lastpage

80

Abstract

Two types of monolithic multipliers have been developed using current AlGaAs HBT (heterojunction bipolar transistor) technology. Both circuits have an intended input frequency range of 10 MHz to 1.0 GHz. Preliminary wafer probe measurements indicate that the even order multiplier achieves 45 dB of fundamental rejection and 22 dB conversion loss at 2.5 GHz (10th harmonic), consuming 175 mW. The odd order multiplier exhibited 21 dB of conversion loss at 10 GHz (10th harmonic) and 35 dB at 21 GHz (21st harmonic), dissipating 315 mW. These circuits offer significant improvement in bandwidth, output power and implementation cost compared to existing diode-based MIC (microwave integrated circuit) or MMIC (monolithic microwave integrated circuit) MESFET frequency multipliers.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; frequency multipliers; gallium arsenide; heterojunction bipolar transistors; 10 MHz to 1 GHz; 175 to 315 mW; 2.5 to 21 GHz; 21 to 34 dB; AlGaAs; MMIC; frequency multipliers; heterojunction bipolar transistor; monolithic HBT multipliers; monolithic microwave integrated circuit; Bandwidth; Frequency; Heterojunction bipolar transistors; Loss measurement; MESFET integrated circuits; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Power generation; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1991. Digest of Papers, IEEE 1991

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-0087-4

Type

conf

DOI

10.1109/MCS.1991.148093

Filename

148093