Title :
Monolithic ultra-broadband transimpedance amplifiers using AlGaAs/GaAs HBTs
Author :
Nagano, N. ; Suzaki, T. ; Okamoto, A. ; Honjo, K.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
Monolithic ultra-broad band transimpedance amplifiers have been developed using AlGaAs/GaAs HBTs (heterojunction bipolar transistors). The amplifiers have exhibited DC to 13.4-GHz bandwidth, with an 18.1-dB gain and a 49.8-dB Omega transimpedance. The standard deviations in gain and 3-dB roll-off bandwidth over 2-in wafers were as small as 0.42 dB and 0.47 GHz, respectively. These results have been brought about by optimized circuit design considering large signal operation and an affordable HBT fabrication process using a self-aligned method. Excellent 10 Gb/s NRZ (nonreturn to zero) pulse response has confirmed that the amplifiers are adapted to 10 Gb/s optical transmission systems.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; optical communication equipment; preamplifiers; wideband amplifiers; 0 to 13.4 GHz; 10 Gbit/s; 13.4 GHz; 18.1 dB; AlGaAs-GaAs; HBT fabrication process; heterojunction bipolar transistors; large signal operation; monolithic ultrabroadband amplifier; self-aligned method; transimpedance amplifiers; ultra-broadband; Bandwidth; Circuit synthesis; Design optimization; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical device fabrication; Optical signal processing; Pulse amplifiers; Signal processing;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1991. Digest of Papers, IEEE 1991
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-0087-4
DOI :
10.1109/MCS.1991.148094
