Title :
35 GHz pseudomorphic HEMT MMIC power amplifier
Author :
Ferguson, D.W. ; Allen, S.A. ; Kao, M.Y. ; Smith, P.M. ; Chao, P.C. ; Upton, M.A.G. ; Ballingall, J.M.
Author_Institution :
GE Aerosp., Syracuse, NY, USA
Abstract :
Double-heterojunction InGaAs pseudomorphic HEMTs (high electron mobility transistors) with a 0.25 mu m gate-length have been integrated into a three-stage power amplifier MMIC (monolithic microwave integrated circuit) designed for the 34-36 GHz band. This first pass design exhibited a peak small-signal gain of 30 dB, a minimum output power of 200 mW with 20 dB associated gain, a power-added efficiency of greater than 18%, and a return loss of greater than 14 dB over the entire band. This performance was measured with the MMIC operating from a single 6 V DC supply.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; power amplifiers; 0.25 micron; 14 dB; 18 percent; 20 dB; 200 mW; 30 dB; 34 to 36 GHz; 35 GHz; 6 V; EHF; InGaAs; MMIC; high electron mobility transistors; monolithic microwave integrated circuit; power amplifier; power-added efficiency; pseudomorphic HEMT; single 6 V DC supply; three-stage; Gain; HEMTs; High power amplifiers; Indium gallium arsenide; MMICs; MODFETs; Microwave amplifiers; Microwave integrated circuits; PHEMTs; Power amplifiers;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1991. Digest of Papers, IEEE 1991
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-0087-4
DOI :
10.1109/MCS.1991.148099
