Title :
Optimization of self-aligned silicon MESFETs for VLSI at micron dimensions
Author :
Darley, H.M. ; Houston, T.W.
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas
Abstract :
This paper discusses the experimental optimization of the structural parameters of MESFET devices using a new self-aligned MESFET structure that incorporates a source-drain extension. Detail device characteristics as a function of gate length and width are presented. Ring oscillator measurements have demonstrated speed-power products as low as 1.5 femtoJoules.
Keywords :
Boron; Implants; Instruments; Laboratories; MESFETs; Metallization; Silicon; Structural engineering; Tail; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189745
