Title :
Scaling the micron barrier with x-rays
Author_Institution :
Bell Laboratories, Murray Hill, New Jersey
Keywords :
Doping; Electron beams; Focusing; MOS devices; MOSFETs; Numerical simulation; Resists; Semiconductor process modeling; Voltage; X-rays;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189747
