Title :
Functional integration of power MOS and bipolar devices
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
The development of vertical power MOSFETs has made it possible for MOS and bipolar functions to be combined advantageously. The SIPMOS (Siemens Power MOS) technique is eminently suitable for this purpose. Vertical MOSFET-triggered thyristors, optically coupled lateral thyristors with MOS input and optically coupled MOS triacs have been implemented and investigated. The common advantages of functionally integrated MOS-bipolar structures are the high input sensitivity, high dV/dt immunity and excellent di/dt capability.
Keywords :
Conductors; Equivalent circuits; FETs; Lithography; MOSFETs; Milling machines; Optical coupling; Optical sensors; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189757
