DocumentCode
3555121
Title
Functional integration of power MOS and bipolar devices
Author
Tihany, J.
Author_Institution
Siemens AG, Munich, Germany
Volume
26
fYear
1980
fDate
1980
Firstpage
75
Lastpage
78
Abstract
The development of vertical power MOSFETs has made it possible for MOS and bipolar functions to be combined advantageously. The SIPMOS (Siemens Power MOS) technique is eminently suitable for this purpose. Vertical MOSFET-triggered thyristors, optically coupled lateral thyristors with MOS input and optically coupled MOS triacs have been implemented and investigated. The common advantages of functionally integrated MOS-bipolar structures are the high input sensitivity, high dV/dt immunity and excellent di/dt capability.
Keywords
Conductors; Equivalent circuits; FETs; Lithography; MOSFETs; Milling machines; Optical coupling; Optical sensors; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189757
Filename
1481200
Link To Document