DocumentCode
3555122
Title
A FET-controlled thyristor in SIPMOS technology
Author
Leipold, L. ; Baumgartner, W. ; Ladenhauf, W. ; Stengl, J.P.
Author_Institution
Siemens AG, Munich, Germany
Volume
26
fYear
1980
fDate
1980
Firstpage
79
Lastpage
82
Abstract
The SIPMOS (Siemens Power MOS) technology was developed for power MOSFETs as well as a. c. power switches in which MOS technology is functionally combined with bipolar devices. This technology which has process steps like those of conventional integrated MOS circuits was used to realize a FET-controlled thyristor. The SIPMOS thyristor shows excellent qualities with regard to on-state current (di/dt=4000 A/us) voltage immunity (dV/dt > 1200 V/us), and firing sensitivity.
Keywords
Anodes; Cathodes; Electrodes; Integrated circuit technology; MOSFETs; P-n junctions; Silicon; Space charge; Thyristors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189758
Filename
1481201
Link To Document