Title :
A unique approach to Ku-band power FETs
Author :
Yamasaki, H. ; Schellenberg, J.M. ; Lemnios, Z.J.
Author_Institution :
Hughes Aircraft Company, Torrance, California
Abstract :
The Ku-band 3.6 mm power FET described in this paper was developed using a unique approach of combining six 0.6 mm cells at the chip level, The resultant device has delivered 2 watts of output power with 3,9 dB gain and 27.5% power added efficiency at 15 GHz, At 18 G.Hz, the output power o5 the same device is 1.25 watts with an associated gain o5 3.5 dB and 16,4% efficiency, This unique cell combining approach has offered significant flexibility in designing Ku-band and higher frequency FETs.
Keywords :
Aircraft; Circuits; Electrodes; FETs; Frequency; Gain; Gallium arsenide; Lithography; Power generation; Temperature;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189766
