An ion-implanted N-well bipolar process for university analog integrated circuit fabrication

Author

Pietra, Andrew R La ; Fuller, Lynn

Author_Institution

Rochester Inst. of Technol., NY, USA

fYear

1991

fDate

12-14 Jun 1991

Firstpage

54

Lastpage

59

Abstract

A five-mask-level, isolated bipolar process was developed. Phosphorous was selectively implanted and annealed into p-type wafers to form the electrically isolated n-wells, and a double diffusion process was used to create active devices inside the n-wells. Several bipolar transistors and simple circuits were successfully fabricated and tested over three developmental processing runs

Keywords

bipolar integrated circuits; elemental semiconductors; integrated circuit technology; ion implantation; linear integrated circuits; phosphorus; silicon; Si:P; active devices; developmental processing runs; double diffusion process; electrically isolated n-wells; ion-implanted N-well bipolar process; isolated bipolar process; p-type wafers; university analog integrated circuit fabrication; Analog integrated circuits; Ash; Circuit testing; Diffusion processes; Fabrication; Isolation technology; Microelectronics; Plasma applications; Plasma devices; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1991. Proceedings., Ninth Biennial

Conference_Location

Melbourne, FL

ISSN

0749-6877

Print_ISBN

0-7803-0109-9

Type

conf

DOI

10.1109/UGIM.1991.148121

Filename

148121