Title :
An ion-implanted N-well bipolar process for university analog integrated circuit fabrication
Author :
Pietra, Andrew R La ; Fuller, Lynn
Author_Institution :
Rochester Inst. of Technol., NY, USA
Abstract :
A five-mask-level, isolated bipolar process was developed. Phosphorous was selectively implanted and annealed into p-type wafers to form the electrically isolated n-wells, and a double diffusion process was used to create active devices inside the n-wells. Several bipolar transistors and simple circuits were successfully fabricated and tested over three developmental processing runs
Keywords :
bipolar integrated circuits; elemental semiconductors; integrated circuit technology; ion implantation; linear integrated circuits; phosphorus; silicon; Si:P; active devices; developmental processing runs; double diffusion process; electrically isolated n-wells; ion-implanted N-well bipolar process; isolated bipolar process; p-type wafers; university analog integrated circuit fabrication; Analog integrated circuits; Ash; Circuit testing; Diffusion processes; Fabrication; Isolation technology; Microelectronics; Plasma applications; Plasma devices; Resists;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1991. Proceedings., Ninth Biennial
Conference_Location :
Melbourne, FL
Print_ISBN :
0-7803-0109-9
DOI :
10.1109/UGIM.1991.148121
