DocumentCode
3555167
Title
Process design using coupled 2D process and device simulators
Author
Chin, D.J. ; Kump, M.R. ; Lee, H.G. ; Dutton, R.W.
Author_Institution
Stanford University, Stanford, CA
Volume
26
fYear
1980
fDate
1980
Firstpage
223
Lastpage
226
Abstract
A novel 2D process simulator has been developed which can handle local oxidation, implantation through arbitrary mask edges, non-planar surfaces, and high concentration diffusion. Through coupling of 2D process and device simulators, simple power law dependencies relating breakdown voltage and perimeter junction capacitance to field implantation dose and local oxidation time have been obtained.
Keywords
Analytical models; Boron; Capacitance; Difference equations; Electrostatics; Finite difference methods; Impurities; Oxidation; Process design; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189799
Filename
1481242
Link To Document