Low temperature recombination lifetime in Si MOSFET´s

The recombination lifetime, τr, has been measured at low temperature in Si p-MOSFET´s using charge pumping. Measurements were performed over the 40-300°K range. A monotonically increasing lifetime with decreasing temperature was measured. τrwas found to be proportional to exp(Ar/kT), where Aris a constant determined from the slope of lnτ vs. l/T. For a typical MOSFET the lifetime ranged from 0.08 µs at 300°K to 0.37 ms at 100°K. The value of Arin this case was determined to be 106 meV.