DocumentCode
3555187
Title
A new model for the second breakdown of bipolar transistors
Author
Latif, M. ; Bryant, P.R.
Author_Institution
University of Waterloo, Waterloo, Ontario, Canada
Volume
26
fYear
1980
fDate
1980
Firstpage
293
Lastpage
296
Abstract
A triggering mechanism of second breakdown is proposed, which depends solely upon the existence of multiple equilibrium points for certain biasing conditions. Using a simple one-dimensional model we are able to predict that part of the safe-operating-area boundary limited by second breakdown. We find that our computed results compare favourably with various experimental measurements made.
Keywords
Bipolar transistors; Breakdown voltage; Content addressable storage; Delay effects; Electric breakdown; Heating; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189817
Filename
1481260
Link To Document