Separation of bulk and interface contributions by optical second harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structure

Author

Dadap, Jerry I. ; Hu, X.F. ; Anderson, M.H. ; Downer, M.C. ; Lowell, J.K. ; Aktsipetrov, O.A.

Author_Institution

Dept. of Phys., Texas Univ., Austin, TX, USA

fYear

1996

fDate

7-7 June 1996

Firstpage

133

Lastpage

134

Abstract

Summary form only given. In the current work we have fully separated these three contributions and their corresponding spectra for the first time, to our knowledge, by performing electromodulated SH spectroscopy on a Si(001) metal-oxide-semiconductor (MOS) structure. The relatively simple tensorial decomposition of nonlinear electroreflectance (NER) at Si(O01) interfaces permits full separation of the three contributions through their contrasting dependence on applied bias and sample azimuthal orientation.

Keywords

MIS structures; electro-optical modulation; electroreflectance; modulation spectroscopy; optical harmonic generation; reflectivity; silicon; Si; Si(001) MOS structure; Si(001) metal-oxide-semiconductor structure; Si(O01) interfaces; applied bias; bulk contributions; contrasting dependence; electromodulated SH spectroscopy; interface contributions; nonlinear electroreflectance; optical second harmonic electroreflectance spectroscopy; sample azimuthal orientation; spectra; tensorial decomposition; Anisotropic magnetoresistance; Azimuthal angle; Frequency dependence; Nonlinear optics; Optical harmonic generation; Physics; Resonance; Space charge; Spectroscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865670