DocumentCode :
355519
Title :
Separation of bulk and interface contributions by optical second harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structure
Author :
Dadap, Jerry I. ; Hu, X.F. ; Anderson, M.H. ; Downer, M.C. ; Lowell, J.K. ; Aktsipetrov, O.A.
Author_Institution :
Dept. of Phys., Texas Univ., Austin, TX, USA
fYear :
1996
fDate :
7-7 June 1996
Firstpage :
133
Lastpage :
134
Abstract :
Summary form only given. In the current work we have fully separated these three contributions and their corresponding spectra for the first time, to our knowledge, by performing electromodulated SH spectroscopy on a Si(001) metal-oxide-semiconductor (MOS) structure. The relatively simple tensorial decomposition of nonlinear electroreflectance (NER) at Si(O01) interfaces permits full separation of the three contributions through their contrasting dependence on applied bias and sample azimuthal orientation.
Keywords :
MIS structures; electro-optical modulation; electroreflectance; modulation spectroscopy; optical harmonic generation; reflectivity; silicon; Si; Si(001) MOS structure; Si(001) metal-oxide-semiconductor structure; Si(O01) interfaces; applied bias; bulk contributions; contrasting dependence; electromodulated SH spectroscopy; interface contributions; nonlinear electroreflectance; optical second harmonic electroreflectance spectroscopy; sample azimuthal orientation; spectra; tensorial decomposition; Anisotropic magnetoresistance; Azimuthal angle; Frequency dependence; Nonlinear optics; Optical harmonic generation; Physics; Resonance; Space charge; Spectroscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
Type :
conf
Filename :
865670
Link To Document :
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