Monolithic InSb CID staring array

Because of their simple structure, modest interconnect requirement, and read-out flexibility, charge-injection devices are attractive candidates for the realization of staring infrared focal-plane arrays. We have developed a CID technology in indium antimonide and have fabricated and tested a 32 × 32 imaging array. The CIDs are fabricated on bulk InSb wafers using a process which requires only four or five photomask steps and no p-n junctions. Read-out is performed without the requirement to operate in the charge-sharing mode. Data have been collected on array spatial uniformity, noise performance, and real-time imaging operation. This paper discusses the device fabrication and presents some of the results of the imager evaluation.