Title :
Low dark current glass bonded AlGaAs/GaAs Schottky gate imaging CCD
Author :
Liu, Y.Z. ; Milano, R.A. ; Anderson, R.J. ; Deyhimy, I. ; Cohen, J.
Author_Institution :
Rockwell International Electronics Research Center, Thousand Oaks, California
Abstract :
The fabrication and characterization of a glass bonded, backside illuminated, AlGaAs/GaAs heterojunction CCD imager is reported. The dark current of these devices is found to be <1 nA/(cm2which indicates that the glass bonding procedure does not adversely effect the dark current device performance. To isolate process induced degradation of the CCD Schottky gates, diodes were fabricated on n-AlxGa1-xAs (0 ≤ × ≤ 0.55) by e-beam evaporation of Cr/AuGe, Ti/Pt/Au and Cr/Au. The data indicate that φBn(Cr) ≤ φBn(Ti) for all solid compositions examined. Low temperature annealing causes a degradation of the Cr/AuGe and Ti/Pt/Au devices; however, the characteristics of the Cr/Au diodes improve significantly
Keywords :
Bonding; Charge coupled devices; Chromium; Dark current; Degradation; Fabrication; Gallium arsenide; Glass; Gold; Schottky diodes;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189831
