• DocumentCode
    3555205
  • Title

    Non-destructive image sensor

  • Author

    Ohmi, Tadahiro ; Tamamushi, Takashige ; Nishizaw, Jun-ichi

  • Author_Institution
    Tohoku University, Sendai, Japan
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    350
  • Lastpage
    354
  • Abstract
    New imaging device characterized by non-destructive read-out operation is discussed theoretically concentrating on an optical sensing process and a read-out process. The light information is continuously stored in this imaging device even during the read-out process. It has been demonstrated theoretically that the stored voltage is almost independent of the storage capacitance due to the existence of the floating n+p contact and that the read-out voltage is almost independent of the bit line capacitance. The new imaging device has excellent features such as non-destructive characteristic, high sensitivity and wide dynamic range.
  • Keywords
    Capacitance; Dynamic range; Electrodes; Electrons; Image sensors; Image storage; MOSFETs; Optical imaging; Optical sensors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189834
  • Filename
    1481277