Title :
Current conduction in thermally grown thin SiO2 films
Author :
Chiou, Y.L. ; Sow, C.H. ; Li, G. ; Gambino, J.P. ; Tsang, P.J.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
The I-V characteristics of thin SiO2 films with thicknesses ranging from 35 to 250 Å were studied using conventional Al-gate MOS capacitors prepared on <100> p-type substrate as the test vehicle. Several measurement techniques including constant voltage, constant current, and voltage pulse were used. Consistent results have been obtained. time-dependent currents were observed in the low field region, i.e. less than 8 MV/cm for oxides thicker than 50 Å due to displacement currents and charge trapping. The slope of the Fowler-Nordheim plot is sensitive to the way the oxide field is estimated. For thicker oxides (greater than 100 Å), the slope may have a value between 240~300 MV/cm depending on the estimated oxide field. For thinner oxides, the slope is smaller due to the enhancement in the direct tunneling effect
Keywords :
aluminium; electron traps; elemental semiconductors; insulating thin films; metal-insulator-semiconductor devices; silicon; silicon compounds; tunnelling; 35 to 250 Å; Al-SiO2-Si; Fowler-Nordheim plot; I-V characteristics; MOS capacitors; charge trapping; constant current; constant voltage; direct tunneling effect; displacement currents; low field region; measurement techniques; p-type substrate; test vehicle; voltage pulse; Aluminum; Conductive films; Dielectric thin films; MOS capacitors; Measurement techniques; Stress; Testing; Thermal conductivity; Tunneling; Voltage;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1991. Proceedings., Ninth Biennial
Conference_Location :
Melbourne, FL
Print_ISBN :
0-7803-0109-9
DOI :
10.1109/UGIM.1991.148128
