• DocumentCode
    3555223
  • Title

    Reactive ion etching for VLSI

  • Author

    Ephrath, L.M. ; Ephrath, L.M.

  • Author_Institution
    IBM Thomas J. Watson Research Center, Yorktown Heights, NY
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    402
  • Lastpage
    404
  • Abstract
    The requirements of VLSI have lead to the development of etching techniques that are capable of transferring ever smaller dimension patterns into the various films that make up a device
  • Keywords
    Cathodes; Counting circuits; Dry etching; Electrodes; Inductors; Plasma applications; Plasma confinement; Plasma devices; Plasma materials processing; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189850
  • Filename
    1481293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555223