Title :
Dry etching technology for 1 µm VLSI fabrication
Author :
Hirata, K. ; Ozaki, Y. ; Oda, Masaomi ; Kimizuka, M. ; Kimizuka, M.
Author_Institution :
Musashino Electrical Communication Laboratory, NTT, Tokyo, Japan
Abstract :
A dry etching technology for 1 µn VLSI fabrication has been developed. Parallel plate RF diode reactors are used for all etching materials:Si3N4, Si02, PSG, poly-Si, Si
Keywords :
Dry etching; Fabrication; Foot; Plasma applications; Plasma properties; Resists; Substrates; Surface cleaning; Surface contamination; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1980 International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/IEDM.1980.189851
