Title :
A 1 µm process: Linewidth control using 10:1 projection lithography
Author :
Sigusch, R. ; Horninger, K.H. ; Muller, W.A. ; Widmann, D. ; Oldham, W.G.
Author_Institution :
Siemens Research Laboratories, Munich, Germany
Abstract :
An n channel silicon gate MOS process using 10:1 optical projection is described. The minimum dimensions are in the range of 1 µm. Linewidths can be controlled within ± 0.2 µm limits for the polysilicon and the contact hole mask levels, and within ± 0.1 µm for the field oxide and the aluminum mask level. A comparison of measured linewidth variations with variations of simulated photoresist linewidths shows that about one third of the measured variations can be attributed to photolithography.
Keywords :
Anisotropic magnetoresistance; Circuit testing; Electronic switching systems; Integrated circuit testing; Lenses; Lithography; Optical films; Process control; Resists; Sputter etching;
Conference_Titel :
Electron Devices Meeting, 1980 International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/IEDM.1980.189857
