• DocumentCode
    3555236
  • Title

    GaAs IGFET: A new device for high speed digital ICs

  • Author

    Schuermeyer, Fritz L. ; Singh, Hausila P. ; Scherer, Russell L. ; Mays, David L.

  • Author_Institution
    Air Force Wright Aeronautical Laboratory, Wright-Patterson AFB, OH
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    441
  • Lastpage
    444
  • Abstract
    GaAs IGFETs contain large interface state densities at midgap which, in the past have hindered the application of these devices in digital ICs. We have developed circuit techniques to charge these interface states such that the device operates in enhancement mode. These interface charges appear frozen at high frequencies. Ring oscillators and divide by two circuits were successfully fabricated and encouraging performance characteristics were observed. This presents the first reported demonstration of divide by two circuits using GaAs IGFET technology.
  • Keywords
    Circuits; Etching; Gallium arsenide; Hysteresis; Insulation; Interface states; Inverters; MOSFETs; Plasma applications; Ring oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189861
  • Filename
    1481304
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555236