Title :
Electrical characterization of MOSIS-fabricated circuit elements
Author :
Stillo, Christopher M. ; Fox, Robert M. ; Langford, D. Scott ; Ferris, D.J.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
SPICE parameters and other data useful for analog design were determined for the MOSIS 2 μm-double-metal double-poly p-well process. The channel-length modulation parameter LAMBDA and noise parameter KF were extracted for various sizes of n- and p-type MOSFETs with poly1 and poly2 gates. the zero-bias threshold voltage, bulk threshold parameters, saturation transconductance, lateral diffusion, and width correction of poly2 transistors were extracted. A vertical bipolar transistor is characterized
Keywords :
MOS integrated circuits; analogue circuits; circuit CAD; electron device noise; insulated gate field effect transistors; semiconductor technology; 2 micron; LAMBDA; MOSIS-fabricated circuit elements; SPICE parameters; analog design; bulk threshold parameters; channel-length modulation parameter; double metal; double-poly p-well process; lateral diffusion; n-type MOSFETs; noise parameter; p-type MOSFETs; poly1 gates; poly2 gates; saturation transconductance; vertical bipolar transistor; width correction; zero-bias threshold voltage; Bipolar transistors; Circuits; Data mining; FETs; Gain measurement; MOSFETs; SPICE; Semiconductor device noise; Signal analysis; Voltage;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1991. Proceedings., Ninth Biennial
Conference_Location :
Melbourne, FL
Print_ISBN :
0-7803-0109-9
DOI :
10.1109/UGIM.1991.148131
