Title :
The role of interface states in photoelectrochemical cells
Author :
Kar, S. ; Jain, S. ; Heller, Adam ; Ashok, S. ; Fonash, S.J.
Author_Institution :
Indian Institute of Technology, Kanpur, India
Abstract :
Theoretical and experimental analysis of the role of the surface states in photoelectrochemical cells has been carried out. The possible role of interface states in the potential barrier in the semiconductor space charge layer, in the change of the interphase potential with the photovoltage, and in the transfer of charge across the interphase have been discussed. The effect of ruthenium treatment of the GaAs electrode on the interface states in n-GaAs/0.8M K2Se- 0.1M K2Se2-1M KOH/C cell has been experimenally analyzed.
Keywords :
Chemicals; Circuits; Electrodes; Energy states; Gallium arsenide; Hysteresis; Interface states; Photonic band gap; Semiconductor diodes; Surface treatment;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189887
