VLSI - A totally self-aligned MOS transistor

High-performance systems of the future will require high-density, very high-speed integrated. circuits. Employing the new totally self-aligned concepts proposed here, it is new feasible to achieve even higher densities and speeds. This is done by self-aligning both the gates, contacts, and metal to the active area, resulting in a totally self-aligned structure. Reduced parasitic effects and overlay requirements make this technology extremely attractive for submicron applications.