DocumentCode
3555350
Title
Self-aligned npn bipolar transistors
Author
Ning, T.H. ; Isaac, R.D. ; Solomon, P.M. ; Tang, D.D. ; Yu, H.N.
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, New York
Volume
26
fYear
1980
fDate
1980
Firstpage
823
Lastpage
824
Keywords
Bipolar transistors; Degradation; Delay; Doping profiles; Impedance; Ion implantation; Isolation technology; Parasitic capacitance; Ring oscillators; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189964
Filename
1481407
Link To Document