A surface kinetics model for plasma etching

The use of plasma etching through multilayer structures is now a common practice in the IC industry. The control of etched profiles is very critical to achieve finely-patterned device structures. Most of the work in the effort of achieving a better profile control has been empirical. For the first time, a simulation model of etching based on the surface kinetics has been developed. This program has the capability of simulating the etching profiles for a wide variety of layer structures and process conditions. Examples, such as the undercut vs. overetch of poly over oxide, are given to illustrate the potential usefulness of such program.