Title :
Threshold behaviour of conductivity in polycrystalline semiconductor thin film transistors
Author :
Levinson, J. ; Scanlon, P.J. ; Shepherd, F.R. ; Westwood, W.D.
Author_Institution :
Soreq Nuclear Research Center, Yavne, Israel
Keywords :
Annealing; Chromium; Grain boundaries; Plasma density; Plasma devices; Semiconductor device doping; Semiconductor process modeling; Semiconductor thin films; Thermal conductivity; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189979
