Title :
A DC model for the HEMT including the effect of parasitic conduction
Author :
Saleh, M. ; El-Nokali, M.
Author_Institution :
Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
Abstract :
A DC model for AlGaAs-GaAs high electron mobility transistor (HEMT) is proposed. The model considers the parasitic parallel conduction in AlGaAs, which becomes important for large gate voltages, together with other important effects, such as field-dependent mobility, channel length modulation, maximum concentration of the two-dimensional electron gas, and series resistances. The theoretical predictions of the model are compared with the experimental data and are found to be in good agreement over a wide range of bias conditions
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; electron gas; gallium arsenide; high electron mobility transistors; semiconductor device models; AlGaAs-GaAs; DC model; HEMT; bias conditions; channel length modulation; field-dependent mobility; gate voltages; high electron mobility transistor; parasitic parallel conduction; series resistances; two-dimensional electron gas; Conducting materials; Digital integrated circuits; Electrons; Gallium arsenide; HEMTs; MODFETs; Poisson equations; Predictive models; Semiconductor materials; Voltage;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1991. Proceedings., Ninth Biennial
Conference_Location :
Melbourne, FL
Print_ISBN :
0-7803-0109-9
DOI :
10.1109/UGIM.1991.148143
