Title :
A subthreshold model for the analysis of MOS IC´s
Author :
El-Nokali, M. ; Afzali-Kushaa, A.
Author_Institution :
Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
Abstract :
An accurate and computationally efficient charge-based model for the intrinsic capacitances in MOS transistors is proposed. The model is valid in the subthreshold regime, and is based on the quasi-static approximation. By integrating this model with a corresponding one in the strong inversion regime, a complete model valid in all regions of operation is presented. An interpolation scheme which guarantees the continuity of the drain current and the capacitances as well as their derivatives is used to provide a smooth transition from subthreshold to strong inversion
Keywords :
MOS integrated circuits; capacitance; insulated gate field effect transistors; semiconductor device models; MOS transistors; MOSFET; charge-based model; drain current; interpolation scheme; intrinsic capacitances; quasi-static approximation; strong inversion regime; subthreshold model; Analog circuits; Capacitance; Circuit simulation; Computational modeling; Equations; Integrated circuit modeling; Interpolation; MOSFETs; Semiconductor process modeling; Voltage;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1991. Proceedings., Ninth Biennial
Conference_Location :
Melbourne, FL
Print_ISBN :
0-7803-0109-9
DOI :
10.1109/UGIM.1991.148144
