DocumentCode :
3555381
Title :
Polycrystalline diamond device processing
Author :
Ellis, Charles D. ; Ramesham, Rajeshuni ; Roppel, Thaddeus A.
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
fYear :
1991
fDate :
12-14 Jun 1991
Firstpage :
222
Lastpage :
225
Abstract :
1 The authors describe processes developed for the fabrication of accelerometers, flow sensors, and microchannel cooling structures, using selectively deposited films and silicon micromachining. The diamond films were grown using an ASTeX high-pressure microwave chemical vapor deposition reactor at 950+/-25°C with a growth rate of approximately 1 μm/h. It was found that polycrystalline diamond films can be used to fabricate various microstructures. A technique for doping diamond films is shown to lower the resistance of the as-grown films
Keywords :
accelerometers; cooling; diamond; elemental semiconductors; flowmeters; heat sinks; micromechanical devices; plasma CVD; semiconductor doping; semiconductor growth; 925 to 975 C; ASTeX; Si micromachining; accelerometers; diamond film doping; fabrication; flow sensors; growth rate; high pressure microwave CVD system; microchannel cooling structures; microstructures; polycrystalline diamond device processing; polycrystalline diamond films; polycrystalling C films; selectively deposited films; semiconductors; Accelerometers; Chemical sensors; Cooling; Fabrication; Microchannel; Micromachining; Microwave devices; Semiconductor films; Sensor phenomena and characterization; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1991. Proceedings., Ninth Biennial
Conference_Location :
Melbourne, FL
ISSN :
0749-6877
Print_ISBN :
0-7803-0109-9
Type :
conf
DOI :
10.1109/UGIM.1991.148154
Filename :
148154
Link To Document :
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